Written by: Newton C. Braga
Wolfspeed Cree 650V C3M™ Silicon Carbide Power MOSFETs

Wolfspeed / Cree 650V C3M™ Silicon Carbide Power MOSFETs offer an optimized package with a separate driver source pin, implementing C3M SiC MOSFET technology. The TO 247-4 package delivers 8mm of creepage distance between drain and source. The Wolfspeed / Cree 650V MOSFETs reduce switching losses and minimize gate ringing. Additionally, the MOSFETs feature a higher system efficiency, decreased cooling requirements, with increased power density and system switching frequency.

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