Nexperia GANB8R0-040CBA Bi-Directional Gallium Nitride (GaN) FET is a 40V, 8.0mΩ bi-directional GaN High Electron-Mobility Transistor (HEMT) housed in a compact 1.7mm x 1.7mm Wafer Level Chip-Scale Package (WLCSP). This normally-off enhancement mode device offers an ultra-high switching speed and low on-state resistance, making the Nexperia GANB8R0-040CBA ideal for applications requiring efficient power management and high power density. The device's bi-directional capability and superior performance make it suitable for use in high-side load switches, over-voltage protection, and DC-to-DC converters.
