ROHM Semiconductor Ultra-Low IR Schottky Barrier Diodes are silicon epitaxial planar-structured diodes with 175°C. These diodes feature a 200V repetitive peak reverse voltage, ultra-low reverse current, 200V reverse voltage, and high reliability. The ultra-low IR Schottky barrier diodes are used in switching power supply, freewheel diodes, and reverse polarity protection applications.
