IXYS IXFxN60X X3-Class HiPerFET™ Power MOSFETs are developed using a charge compensation principle and proprietary process technology that provides best-in-class Figure of Merit (on-resistance times gate charge). These characteristics translate into low conduction and switching losses. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. The 600V IXFxN60X X3-Class HiPerFET™ Power MOSFETs are avalanche capable, exhibit a superior dv/dt performance, and are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors. These rugged devices from IXYS require fewer snubbers and can be used in both hard and soft-switching power converters.
