Infineon Technologies EiceDRIVER™ 2EDB Gate-Driver ICs include the 2EDB8259F and 2EDBx259Y, designed to drive Si and SiC MOSFETs and GaN HEMT power switches. The family of dual-channel isolated gate-driver ICs are offered in a DSO package with 4mm input-to-output creepage and facilitates primary isolation employing on-chip coreless transformer (CT) technology. The 2EDBx279Y variants in a 14-pin DSO package offer increased channel-to-channel creepage. The devices are suited for use in applications with higher bus voltage or pollution degrees and generally can ease PCB routing.

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