ROHM Semiconductor RBQxxBGE Schottky Barrier Diodes
RBQxxBGE Schottky Barrier Diodes from ROHM feature a silicon epitaxial planar structure and 45V or 65V repetitive peak reverse voltage. The RBQxxBGE Schottky Barrier Diodes offer high reliability, a low IR, and cathode common dual type. The ROHM RBQxxBGE Diodes are designed for switching power supply applications.
