onsemi NTBG025N065SC1 Silicon Carbide (SiC) MOSFET is a 19mΩ, 650V MOSFET housed in a D2PAK-7L package. The SiC MOSFETs are designed to be fast and rugged. The devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer 3x higher energy band gap, and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP capable options specifically engineered and qualified for automotive and industrial applications.
