Sanan Semiconductor Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) are developed using Sanan’s advanced 3rd generation SiC SBD technology with high performance and reliability. These SBDs register higher efficiency, higher operation temperatures, and lower losses and operate at higher frequencies than Si-based solutions. The Schottky structure shows no recovery at turn-off and allows a low leakage current with a reverse voltage of up to 1200V. It can contribute to system miniaturization and achieve lightweight system design. Using RoHS-compliant components, the Sanan Semiconductor SiC SBDs are qualified for industrial applications.
